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| (R) ST2408HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 1 s APPLICATIONS: HORIZONTAL DEFLECTION FOR MONITORS 17 INCHES AND HIGH END TVS DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P tot V isol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T C = 25 C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature o Value 1500 600 7 12 25 7 55 2500 -65 to 150 150 Unit V V V A A A W V o o C C December 2002 1/6 ST2408HI THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.3 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1500 V V EB = 7 V I C = 100 mA L = 25 mH 600 Min. Typ. Max. 1 1 Unit mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) * V BE(sat) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain IC = 8 A IC = 8 A IC = 1 A IC = 5 A IC = 8 A IC = 6 A I B(on) = 950 mA L BB(off) = 1.5 H IB = 2 A IB = 2 A V CE = 5 V V CE = 1 V V CE = 5 V f h = 64 KHz V BB(off) = -2.5 V (see figure 1) 25 5.5 6 2.5 110 3 1.5 V V 9 3 260 s ns ts tf INDUCTIVE LOAD Storage Time Fall Time Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Thermal Impedance 2/6 ST2408HI Derating Curve Output Characteristics Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain DC Current Gain 3/6 ST2408HI Power Losses Switching Time Inductive Load Reverse Biased Soa Figure 1: Inductive Load Switching Test Circuit. 4/6 ST2408HI ISOWATT218 NARROW LEADS MECHANICAL DATA DIM. A C D D1 E F F2 F3 F5 G H L L1 L2 L3 L4 L5 L6 N R DIA mm TYP. inch TYP. MIN. 5.35 3.30 2.90 1.88 0.75 0.75 1.50 1.90 10.80 15.80 MAX. 5.65 3.80 3.10 2.08 0.95 0.95 1.70 2.10 1.10 11.20 16.20 21.20 19.90 23.60 42.50 5.25 20.75 2.3 MIN. 0.211 0.130 0.114 0.074 0.030 0.030 0.059 0.075 0.425 0.622 MAX. 0.222 0.150 0.122 0.082 0.037 0.037 0.067 0.083 0.043 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 4.6 3.5 3.7 0.138 0.819 0.752 0.898 1.594 0.191 0.797 0.083 0.354 0.181 0.146 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 m P025C/B 5/6 ST2408HI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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